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更多>>小體積高精密的CMOS振蕩器X1G005601004300
來(lái)源:http://m.tqlwapf.cn 作者:hiso 2022年08月31
小體積高精密的CMOS振蕩器X1G005601004300,隨著5G通信,智能家居,物聯(lián)網(wǎng)等產(chǎn)品的快速發(fā)展,未來(lái)的晶振產(chǎn)品將會(huì)發(fā)生非常大的變化,而未來(lái)有源晶振會(huì)成為主流產(chǎn)品,當(dāng)然,離不開(kāi)其獨(dú)特的性能,以及超高的可靠性能和耐壓性能等特點(diǎn),高科技的產(chǎn)品引領(lǐng)著世界的發(fā)展趨勢(shì),從而也使得晶振產(chǎn)品出現(xiàn)了非常大的進(jìn)步,市場(chǎng)不斷淘汰掉舊的產(chǎn)品,或是不斷優(yōu)化產(chǎn)品的性能,石英晶體振蕩器的主要特性之一是工作溫度內(nèi)的穩(wěn)定性,它是決定振蕩器價(jià)格的重要因素。穩(wěn)定性愈高或溫度范圍愈寬,器件的價(jià)格亦愈高。工業(yè)級(jí)標(biāo)準(zhǔn)規(guī)定的-40~+75℃這個(gè)范圍往往只是出于設(shè)計(jì)者們的習(xí)慣,倘若-30~+70℃已經(jīng)夠用,那么就不必去追求更寬的溫度范圍。
設(shè)計(jì)工程師要慎密決定特定應(yīng)用的實(shí)際需要,然后規(guī)定有源晶體振蕩器的穩(wěn)定度。指標(biāo)過(guò)高意味著花錢(qián)愈多。晶體老化是造成頻率變化的又一重要因素。根據(jù)目標(biāo)產(chǎn)品的預(yù)期壽命不同,有多種方法可以減弱這種影響。晶體老化會(huì)使輸出頻率按照對(duì)數(shù)曲線發(fā)生變化,也就是說(shuō)在產(chǎn)品使用的第一年,這種現(xiàn)象才最為顯著。例如,使用10年以上的晶體,其老化速度大約是第一年的3倍。采用特殊的晶體加工工藝可以改善這種情況,也可以采用調(diào)節(jié)的辦法解決,比如,可以在控制引腳上施加電壓(即增加電壓控制功能)等。
Product Number | 進(jìn)口晶振型號(hào) | Frequency | LxWxH | Output Wave | Supply Voltage | Ope Temperature | Freq. Tol. | I [Max] |
X1G005601002500 | SG-8018CG | 12.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601002600 | SG-8018CG | 12.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601002700 | SG-8018CG | 10.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601002800 | SG-8018CG | 10.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601002900 | SG-8018CG | 27.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005601003000 | SG-8018CG | 27.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005601003100 | SG-8018CG | 32.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005601003200 | SG-8018CG | 32.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005601003300 | SG-8018CG | 8.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601003400 | SG-8018CG | 8.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601003500 | SG-8018CG | 14.745600 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601003600 | SG-8018CG | 14.745600 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601003700 | SG-8018CG | 12.288000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601003800 | SG-8018CG | 12.288000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601003900 | SG-8018CG | 33.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005601004000 | SG-8018CG | 33.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005601004100 | SG-8018CG | 30.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005601004200 | SG-8018CG | 30.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005601004300 | SG-8018CG | 26.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005601004400 | SG-8018CG | 26.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005601004500 | SG-8018CG | 24.576000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005601004600 | SG-8018CG | 24.576000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
Product Number | 進(jìn)口晶振型號(hào) | Frequency | LxWxH | Output Wave | Supply Voltage | Ope Temperature | Freq. Tol. | I [Max] |
X1G005601004700 | SG-8018CG | 100.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 5.9 mA |
X1G005601004800 | SG-8018CG | 100.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 5.9 mA |
X1G005601004900 | SG-8018CG | 4.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601005000 | SG-8018CG | 4.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601005100 | SG-8018CG | 66.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 5.2 mA |
X1G005601005200 | SG-8018CG | 66.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 5.2 mA |
X1G005601005300 | SG-8018CG | 19.660800 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601005400 | SG-8018CG | 19.660800 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601005500 | SG-8018CG | 125.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 6.7 mA |
X1G005601005600 | SG-8018CG | 125.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 6.7 mA |
X1G005601005700 | SG-8018CG | 33.333300 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005601005800 | SG-8018CG | 33.333300 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005601005900 | SG-8018CG | 96.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 5.9 mA |
X1G005601006000 | SG-8018CG | 48.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005601006100 | SG-8018CG | 13.516800 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601006200 | SG-8018CG | 64.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 5.2 mA |
X1G005601006300 | SG-8018CG | 13.107200 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601006400 | SG-8018CG | 12.500000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601006500 | SG-8018CG | 80.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 5.9 mA |
X1G005601006600 | SG-8018CG | 16.384000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
小體積高精密的CMOS振蕩器X1G005601004300,與穩(wěn)定度有關(guān)的其他因素還包括電源電壓、負(fù)載變化、相位噪聲和抖動(dòng),這些指標(biāo)應(yīng)該規(guī)定出來(lái)。對(duì)于工業(yè)產(chǎn)品,有時(shí)還需要提出振動(dòng)、沖擊方面的指標(biāo),軍用品和宇航設(shè)備的要求往往更多,比如壓力變化時(shí)的容差、受輻射時(shí)的容差,等等。
愛(ài)普生晶振公司憑借著自身獨(dú)特的見(jiàn)解,研發(fā)設(shè)計(jì)生產(chǎn)出了SG-8018CG有源晶振,SPXO振蕩器,編碼X1G005601004300,頻率26.000000兆赫,輸出WaveCMOS,供電電壓1.62至3.63 V,尺寸(長(zhǎng)×寬×高)2.50 × 2.00 × 0.80毫米,工作溫度-40到+105°C,頻率公差±50ppm,額外的OptionsN /,OSC TypeProgrammable Clock時(shí)鐘OSC,具有更廣泛的工作溫度范圍,最高極限為105°C。除了2.5 × 2.0 mm的封裝,將使電子制造商節(jié)省板空間,該振蕩器也將在以下流行的封裝尺寸:3.2 × 2.5 mm, 5.0 × 3.2 mm和7.0 × 5.0 mm。SG-8018系列振蕩器的頻率容忍度約為66%比同類(lèi)產(chǎn)品低50%的電流消耗,適用范圍廣環(huán)境條件。這也將大大有助于性能,更低的功率要求,快速開(kāi)發(fā)周期和低量生產(chǎn)。
愛(ài)普生晶振公司憑借著自身獨(dú)特的見(jiàn)解,研發(fā)設(shè)計(jì)生產(chǎn)出了SG-8018CG有源晶振,SPXO振蕩器,編碼X1G005601004300,頻率26.000000兆赫,輸出WaveCMOS,供電電壓1.62至3.63 V,尺寸(長(zhǎng)×寬×高)2.50 × 2.00 × 0.80毫米,工作溫度-40到+105°C,頻率公差±50ppm,額外的OptionsN /,OSC TypeProgrammable Clock時(shí)鐘OSC,具有更廣泛的工作溫度范圍,最高極限為105°C。除了2.5 × 2.0 mm的封裝,將使電子制造商節(jié)省板空間,該振蕩器也將在以下流行的封裝尺寸:3.2 × 2.5 mm, 5.0 × 3.2 mm和7.0 × 5.0 mm。SG-8018系列振蕩器的頻率容忍度約為66%比同類(lèi)產(chǎn)品低50%的電流消耗,適用范圍廣環(huán)境條件。這也將大大有助于性能,更低的功率要求,快速開(kāi)發(fā)周期和低量生產(chǎn)。
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此文關(guān)鍵字: CMOS振蕩器
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