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更多>>SMD溫補(bǔ)晶振X1G00539100220與汽車胎壓檢測絕配?
來源:http://m.tqlwapf.cn 作者:ciuy 2022年10月13
SMD溫補(bǔ)晶振X1G00539100220與汽車胎壓檢測絕配?愛普生是一家非常具有創(chuàng)新能力,以及追求極致完美的知名制造商,通過自身努力奮斗,贏得廣大用戶為其喝彩,成長的路上不懼困難,敢于不斷挑戰(zhàn)自我,并開發(fā)出具有優(yōu)勢的晶振產(chǎn)品,研發(fā)生產(chǎn)這款TG5032CFN晶振,有源晶振編碼X1G005391002200,頻率40.000000兆赫,輸出WaveCMOS,電源電壓3.13 ~ 3.46 V,電源電壓(一般)3.300V,尺寸(LxWxH)5.0 x 3.2 x 1.4mm,操作溫度-40至++85°C,頻率公差+/- 1.0ppm,具有低損耗,低相位相噪,高性能的特點,適合用于汽車胎壓檢測,羅拉無線模塊,通訊模塊,儀器設(shè)備,醫(yī)療設(shè)備等領(lǐng)域。
SMD溫補(bǔ)晶振X1G00539100220與汽車胎壓檢測絕配?愛普生通過應(yīng)用其多年來開發(fā)的高效、緊湊和精密技術(shù)來解決挑戰(zhàn),尋求推進(jìn)工業(yè)前沿并推動循環(huán)經(jīng)濟(jì)。這些技術(shù)可以節(jié)省能源、實現(xiàn)更小的石英晶振產(chǎn)品并提高準(zhǔn)確性和精度,使愛普生能夠為可持續(xù)發(fā)展目標(biāo) (SDG) 做出貢獻(xiàn),從而為所有人帶來更美好、更可持續(xù)的未來。
愛普生拓優(yōu)科夢把半導(dǎo)體(IC)稱之為“產(chǎn)業(yè)之米”,并認(rèn)為晶體元器件更是離不開的“產(chǎn)業(yè)之鹽”.將進(jìn)一步致力于小型、高穩(wěn)定、高精度進(jìn)口晶振,晶體元器件的開發(fā),為現(xiàn)有的應(yīng)用程序以及生活新藍(lán)圖開拓廣闊前景.
SMD溫補(bǔ)晶振X1G00539100220與汽車胎壓檢測絕配?愛普生通過應(yīng)用其多年來開發(fā)的高效、緊湊和精密技術(shù)來解決挑戰(zhàn),尋求推進(jìn)工業(yè)前沿并推動循環(huán)經(jīng)濟(jì)。這些技術(shù)可以節(jié)省能源、實現(xiàn)更小的石英晶振產(chǎn)品并提高準(zhǔn)確性和精度,使愛普生能夠為可持續(xù)發(fā)展目標(biāo) (SDG) 做出貢獻(xiàn),從而為所有人帶來更美好、更可持續(xù)的未來。
Product Number | Model | 愛普生晶振 | LxWxH | Output Wave | Supply Voltage | F.Tol@25°C | Ope Temperature |
X1G005391000600 | TG5032CFN | 19.200000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005391000700 | TG5032CFN | 40.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005391000800 | TG5032CFN | 25.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005391000900 | TG5032CFN | 10.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005391001000 | TG5032CFN | 10.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005391001100 | TG5032CFN | 26.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005391001500 | TG5032CFN | 20.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005391001600 | TG5032CFN | 25.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005391001700 | TG5032CFN | 19.200000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005391001800 | TG5032CFN | 26.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005391001900 | TG5032CFN | 25.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005391002000 | TG5032CFN | 26.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005391002100 | TG5032CFN | 10.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005391002200 | TG5032CFN | 40.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005391002300 | TG5032CFN | 24.576000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005391002500 | TG5032CFN | 10.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005391002600 | TG5032CFN | 20.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005391002700 | TG5032CFN | 40.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005391003000 | TG5032CFN | 19.440000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005391003100 | TG5032CFN | 40.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G005391003200 | TG5032CFN | 40.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G005391003300 | TG5032CFN | 30.720000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G005391003400 | TG5032CFN | 20.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G005391003500 | TG5032CFN | 25.600000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G005391003600 | TG5032CFN | 30.720000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G005391003700 | TG5032CFN | 15.360000 MHz | 5.00 x 3.20 x 1.50 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
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